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P‐196: Controlling Recombination Zone in p ‐i‐ n White Organic Light‐Emitting Diode
Author(s) -
Ma JiaWei,
Hwang ShiaoWen,
Chang ChanChing,
Hsu Shih Feng,
Chen Chin H.
Publication year - 2006
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2433684
Subject(s) - rubrene , oled , doping , triphenylamine , luminance , diode , recombination , layer (electronics) , materials science , optoelectronics , chemistry , analytical chemistry (journal) , physics , optics , nanotechnology , biochemistry , gene , chromatography
Abstract P‐i‐n Devices with 2% Cs 2 CO 3 doped BPhen as the n‐type transporting layer and WO 3 doped triphenylamine derivatives as the p‐type transporting layer, coupled with a modified composition of sky blue DSA doped MADN and yellow rubrene doped NPB emitters, are investigated to control the RZ of carriers in WOLED. We found the shift of recombination zone (RZ) as revealed by the amount of blue and yellow emissions produced is a dominant factor leading to the variation in white CIE x,y color coordinates with respect to luminance. A color stable p‐i‐n WOLED with CIEx,y coordinates of (0.32, 0.43) was achieved at a driving voltage of 3.4 V with a power efficiency of 9.2 lm/W at 1000 cd/m 2 .