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P‐194: Studies of Carrier Dynamics and Luminescence Mechanisms of C545T‐doped Alq 3
Author(s) -
Feng ShihWei,
Chung ChiaTin,
Wu ChingIn,
Shih MingChang,
Huang C. J.
Publication year - 2006
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2433682
Subject(s) - dopant , doping , materials science , optoelectronics , photoluminescence , luminescence , electroluminescence , wavelength , chemical physics , molecular physics , chemistry , nanotechnology , layer (electronics)
Abstract We have studied carrier dynamics and lminescence mechanisms of C545T‐doped Alq 3 by the material, optical as well as electrical characteristics measurements. The spectra of C545T‐doped Alq 3 become narrower, which shows dopants benefits color tuning and create saturated colors. Based on TRPL measurements, the mechanism of carrier transport from host states to singlet states of dopants was proposed for interpreting the early‐stage fast decay, delayed slow rise, and extended slow decay of PL intensity. SEM image showed that as the dopant concentration was above 1%, the dopants tend to aggregate. The aggregations degrade the device performances such as an apparent long‐wavelength shoulder of EL spectrum, higher driving voltage, low current density, high built‐in voltage, low carrier mobility, and enhanced nonradiative recombination rates.