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P‐142: Design of Electrode Structure for AS”‐IPS Mode with High Aperture Ratio and Low Crosstalk
Author(s) -
Lin JiunnShyong,
Shih PoSheng,
Yang KeiHsiung,
Chen ShuHsia
Publication year - 2006
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2433617
Subject(s) - crosstalk , electrode , aperture (computer memory) , materials science , optoelectronics , electronic engineering , chemistry , engineering , mechanical engineering
In a previous publication, we have investigated the Advanced Super'‐IPS (AS”‐IPS) structure to obtain higher aperture ratio and low crosstalk. In this paper, we propose a novel electrode structure, named AS”‐IPS, to reduce the thickness of the organic layer used in AS”‐IPS for higher manufacture yield and lower manufacture cost.