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P‐135: Fast Bend Transition of the Pi‐Cell at Low Temperature
Author(s) -
Park Jun Ho,
Choi Duk Woon,
Choi Kyung Ho,
Kim Tae Soo,
Kim Kee Doo,
Yoon TaeHoon,
Kim Jae Chang
Publication year - 2006
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2433608
Subject(s) - pi , materials science , waveform , silicon , electrode , transition temperature , transistor , thin film transistor , optoelectronics , composite material , electrical engineering , condensed matter physics , chemistry , voltage , physics , engineering , layer (electronics) , biochemistry , superconductivity
We have developed fast bend transition method of pi‐cell in low temperature. This cell requires a transition of the liquid crystals (LC) from an initial splay state to bend transition before normal driving operation. This study analyzed the conditions under which this transition is generated in low temperature. Consequently, a method of fast bend transition by applying waveform that make the most of LC's dynamic response, using structure of top‐gate electrode and surface alignment in Low Temperature Poly‐Silicon (LTPS) Thin Film Transistor (TFT) cell was established.