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P‐120: High Efficiency Method of Selective CNT Arrays Growth on the Metal/Dielectric/Semiconductor Substrates for FEDs Application
Author(s) -
Shulitski B. G.,
Labunov V. A.,
Prudnikava A. L.
Publication year - 2006
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2433587
Subject(s) - materials science , nanoporous , carbon nanotube , catalysis , ferrocene , chemical engineering , dielectric , semiconductor , selectivity , metal , thermal decomposition , nanotechnology , atmospheric pressure , electrode , optoelectronics , organic chemistry , chemistry , metallurgy , electrochemistry , oceanography , geology , engineering
Multi‐wall carbon nanotube (CNT) arrays growth by the atmospheric pressure CVD process of thermal decomposition of fluid (o‐ and p‐xylole C 8 H 10 ) hydrocarbons in the presence of volatile catalysts (ferrocene Fe(C 5 H 5 ) 2 ) with the use of Ar as a gas‐carrier on the top of different metal/dielectric/semiconductor (MDS) structures, in particular Si/SiO 2 , Ti/SiO 2 /Si, Al 2 O 3 matrix/Ni catalyst has been investigated for the FEDs application. The obtained results are showing that the CNTs growth selectivity and density of CNTs packing can be managed under certain conditions. At the investigated types of surfaces the vertically aligned close‐packed and preferably oriented low density CNT arrays have been obtained as well as single CNTs in the pores of nanoporous Al 2 O 3 matrix with Ni catalyst.