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P‐22: Bottom‐Gate Poly‐Si TFTs for AMOLED Backplane
Author(s) -
Oh Jae Hwan,
Kim Se Hwan,
Choi Jae Won,
Kang Dong Han,
Lee Eun Young,
Hur Ji Ho,
Jang Jin
Publication year - 2006
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2433473
Subject(s) - backplane , amoled , materials science , thin film transistor , optoelectronics , electrical engineering , active matrix , nanotechnology , engineering , layer (electronics)
We developed a giant‐grain silicon (GGS) with a grain size reaching up to 100 μm the gate insulator of a inverted staggered TFT for AMOLED backplane. The a‐Si on the gate insulator was crystallized by pulsed heating. The inverted staggered n‐channel TFT with GGS exhibited a field‐effect mobility of 18.5 cm 2 /Vs, a gate swing of 2.3 V/dec. and a minimum leakage current of < 1.0 × 10 −13 A/um at V ds =5 V. The TFT can be applied to make a low‐cost backplane for AMOLED and AMLCD.