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P‐17: High Performance Polycrystalline Silicon TFTs by Heat‐Retaining Enhanced Crystallization for SOP and AMOLED Applications
Author(s) -
Wu HsingHua,
Liu PoTsun,
Yu HuangSung,
Chang TingChang,
Lin JiaXing,
Chen HungTse,
Huang ShunFa,
Chen YuCheng,
Chen ChiLin
Publication year - 2006
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2433467
Subject(s) - materials science , crystallization , amoled , optoelectronics , layer (electronics) , polycrystalline silicon , active layer , crystallite , silicon , composite material , thin film transistor , metallurgy , chemical engineering , active matrix , engineering
Abstract For the purpose of a reliable driving back‐plane in AMOLED application, the Heat Retaining Enhanced Crystallization (HREC) technology is developed. A heat‐retaining capping layer is applied in order to effectually slow down the heat dissipation and to retain the duration of melt, hence an enlarged poly‐si grain lateral growth is obtained. With single‐shot laser irradiation, a 7um‐well location‐controlled‐n ploy Si active layer is obtained, exhibiting a high mobility (u FE =260cm 2 /Vsec) for the proposed dual‐gate TFT device.