P‐17: High Performance Polycrystalline Silicon TFTs by Heat‐Retaining Enhanced Crystallization for SOP and AMOLED Applications | Zendy

Wu HsingHua | Zendy; Liu PoTsun | Zendy; Yu HuangSung | Zendy; Chang TingChang | Zendy; Lin JiaXing | Zendy; Chen HungTse | Zendy; Huang ShunFa | Zendy; Chen YuCheng | Zendy; Chen ChiLin | Zendy

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P‐17: High Performance Polycrystalline Silicon TFTs by Heat‐Retaining Enhanced Crystallization for SOP and AMOLED Applications

Author(s) -

Wu HsingHua,

Liu PoTsun,

Yu HuangSung,

Chang TingChang,

Lin JiaXing,

Chen HungTse,

Huang ShunFa,

Chen YuCheng,

Chen ChiLin

Publication year - 2006

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.2433467

Subject(s) - materials science , crystallization , amoled , optoelectronics , layer (electronics) , polycrystalline silicon , active layer , crystallite , silicon , composite material , thin film transistor , metallurgy , chemical engineering , active matrix , engineering

For the purpose of a reliable driving back‐plane in AMOLED application, the Heat Retaining Enhanced Crystallization (HREC) technology is developed. A heat‐retaining capping layer is applied in order to effectually slow down the heat dissipation and to retain the duration of melt, hence an enlarged poly‐si grain lateral growth is obtained. With single‐shot laser irradiation, a 7um‐well location‐controlled‐n ploy Si active layer is obtained, exhibiting a high mobility (u FE =260cm 2 /Vsec) for the proposed dual‐gate TFT device.

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