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P‐12: High Performance CLC (CW Lateral Crystallized) Poly‐Si TFT with Controlled Strain on Glass Substrate
Author(s) -
Yoshino Kenichi,
Takei Michiko,
Sasaki Nobuo
Publication year - 2006
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2433463
Subject(s) - materials science , thin film transistor , substrate (aquarium) , strain (injury) , bending , optoelectronics , electrode , raman scattering , breakage , stress (linguistics) , raman spectroscopy , composite material , optics , layer (electronics) , chemistry , medicine , linguistics , oceanography , physics , philosophy , geology
This paper describes high‐performance TFTs fabricated by using CLC Si film with a large grains and an additional strain induced in the film. The additional strain in the CLC Si film is controlled by the thickness of Mo gate electrode. The increase in strain is measured by Raman scattering. The enhancement of TFT mobility with the additional strain is confirmed by the uniaxial stress applied to the TFT with a bending apparatus; the glass substrate of TFT have been thinned enough to avoid breakage. Propagation delay of 98 ps/stage is obtained at Vdd of 5V for 1um gate‐length ring oscillators fabricated by the controlled strained CLC technology.