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P‐10 Post‐Crystallization of Metal‐Induced Laterally Crystallized Poly‐Si with YAG Laser
Author(s) -
Meng Zhiguo,
Zhang Dongli,
Wu Chunya,
Zhang Bo,
Kwok HoiSing,
Wong Man
Publication year - 2006
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2433461
Subject(s) - materials science , crystallization , polycrystalline silicon , thin film transistor , laser , thin film , crystallite , silicon , amorphous silicon , amorphous solid , optoelectronics , composite material , optics , metallurgy , crystalline silicon , nanotechnology , crystallography , chemical engineering , chemistry , physics , layer (electronics) , engineering
Post‐crystallization heat‐treatment of metal‐induced laterally crystallized polycrystalline silicon thin film using YAG solid‐state laser is characterized. It is found that both the material quality and the TFT performance are related to the laser‐treatment condition. The amorphous silicon fraction remaining in the polycrystalline thin film can be reduced and the performance of the thin‐film transistors fabricated on the laser‐treated thin film under an optimized condition can be greatly improved.