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4.2: Scaling Effects on ZnO Transparent TFTs
Author(s) -
Hsieh HsingHung,
Wu ChungChih
Publication year - 2006
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2433458
Subject(s) - thin film transistor , threshold voltage , materials science , channel length modulation , scaling , subthreshold slope , optoelectronics , subthreshold conduction , short channel effect , transistor , channel (broadcasting) , saturation (graph theory) , voltage , electrical engineering , nanotechnology , mosfet , geometry , engineering , layer (electronics) , mathematics , combinatorics
Scaling behaviors of ZnO transparent thin‐film transistors (TTFTs) have been studied by fabricating series of miniaturized ZnO TTFTs having various channel widths and lengths. Mobility of >8 cm 2 /V⋅s and on/off ratio of up to 10 7 are achieved with these TTFTs. Results show that these ZnO TTFTs retain rather well‐behaved transistor characteristics down to the channel length of ∼5 μm, rendering possible high‐resolution applications. More apparent short‐channel effects (e.g., lowering of threshold voltages, degradation of the subthreshold slope with the decrease of the channel length and the increase of the drain voltage, and loss of hard saturation, etc.) are observed when the channel length is reduced below 5 μm.