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P‐3: Organic Thin‐Film Transistors with Solution‐Processed Pentacene and Polysilazane Using Self‐Aligned Device Structure
Author(s) -
Kawasaki M.,
Imazeki S.,
Inoue T.,
Ando M.,
Natsume Y.,
Minakata T.
Publication year - 2006
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2433450
Subject(s) - pentacene , materials science , thin film transistor , optoelectronics , organic semiconductor , electrode , transistor , thin film , dielectric , semiconductor , nanotechnology , electrical engineering , layer (electronics) , chemistry , voltage , engineering
We have fabricated organic thin‐film transistors that had a high field‐effect mobility of 0.39 cm 2 /Vs, in which both the semiconductor and the gate‐dielectric were solution‐processed using pentacene and polysilazane. These materials were also applied to a self‐aligned structure for the first time and exhibited good device performance with solution‐processed electrodes.