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P‐2: High Performance of Polycrystalline Silicon TFT on Plastic Substrate Processed at Very Low Temperatures
Author(s) -
Kim YongHae,
Chung ChoongHeui,
Lee MyungHee,
Yun Sun Jin,
Moon Jaehyun,
Kim Gi Heon,
Park DongJin,
Lim Jung Wook,
Song YoonHo,
Lee Jin Ho
Publication year - 2006
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2433439
Subject(s) - polycrystalline silicon , materials science , thin film transistor , substrate (aquarium) , silicon , oxide thin film transistor , layer (electronics) , optoelectronics , crystallite , oxide , gate oxide , composite material , transistor , electrical engineering , metallurgy , oceanography , geology , engineering , voltage
A high performance of ultralow temperature polycrystalline silicon TFT was obtained on a plastic substrate using the optimization of an oxide‐silicon‐oxide buffer structure for an plastic substrate, the high quality SiO 2 interface layer formation between the gate dielectric film and the poly‐Si film using a plasma oxidation.
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