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70.4: A 14.1inch AMOLED Display using Highly Stable PECVD based Microcrystalline Silicon TFT Backplane
Author(s) -
Girotra Kunal S.,
Souk JunHyung,
Chung Kyuha,
Lim Soonkwon,
Kim Shiyul,
Kim ByoungJune,
Yang SungHoon,
Choi Beohmrock,
Goh Joonchul,
Song YoungRok,
Choi YongMo
Publication year - 2006
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2433437
Subject(s) - amoled , thin film transistor , materials science , backplane , plasma enhanced chemical vapor deposition , optoelectronics , silicon , oled , active matrix , threshold voltage , transistor , voltage , nanotechnology , electrical engineering , computer science , computer hardware , layer (electronics) , engineering
We have developed a 14.1 inch AMOLED display using microcrystalline silicon (mc‐Si) TFTs. Microcrystalline silicon was deposited using conventional 13.56MHz Plasma Enhanced Chemical Vapor Deposition (PECVD). Detailed thin film characterization of mc‐Si films was followed by development of mc‐Si TFTs which show a field effect mobility of around 0.7∼1.0cm 2 /V.s. The mc‐Si TFTs show no significant shift in threshold voltage when applied with a long time constant current stress, indicating a stable TFT backplane. The mc‐Si TFTs were successfully integrated in a 14.1 inch AMOLED display. The display shows no significant current decrease in the driving TFT of the 2T circuit, even after long time of lifetime tests. Along with improved lifetime for AMOLED display, the development of mc‐Si TFTs using conventional 13.56 MHz PECVD system offers significant cost advantages over other laser or non‐laser polysilicon TFT technologies for AMOLED.