65.1: High Conductivity SnO 2  Thin Films for Flat Panel Displays | Zendy

Isono Takamitsu | Zendy; Fukuda Takeshi | Zendy; Nakagawa Koji | Zendy; Usui Reo | Zendy; Satoh Ryohei | Zendy; Morinaga Eiji | Zendy; Mihara Yu | Zendy

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65.1: High Conductivity SnO 2 Thin Films for Flat Panel Displays

Author(s) -

Isono Takamitsu,

Fukuda Takeshi,

Nakagawa Koji,

Usui Reo,

Satoh Ryohei,

Morinaga Eiji,

Mihara Yu

Publication year - 2006

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.2433411

Subject(s) - annealing (glass) , materials science , conductivity , electrode , plasma display , optoelectronics , electrical resistivity and conductivity , plasma , flat panel , barrier layer , sheet resistance , atomic layer deposition , thin film , composite material , nanotechnology , layer (electronics) , optics , chemistry , electrical engineering , engineering , physics , quantum mechanics

We examine SnO 2 as a next generation material for transparent electrode using electron beam (EB) plasma deposition method at room temperature. We have found that a SiO 2 layer is a very effective barrier in reducing the increase in resistance caused by annealing. Making use of this barrier, we were successful in obtaining SnO 2 resistivities as low as 6.60 × 10 −5 Ω ⋅ m after annealing.

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