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65.1: High Conductivity SnO 2 Thin Films for Flat Panel Displays
Author(s) -
Isono Takamitsu,
Fukuda Takeshi,
Nakagawa Koji,
Usui Reo,
Satoh Ryohei,
Morinaga Eiji,
Mihara Yu
Publication year - 2006
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2433411
Subject(s) - annealing (glass) , materials science , conductivity , electrode , plasma display , optoelectronics , electrical resistivity and conductivity , plasma , flat panel , barrier layer , sheet resistance , atomic layer deposition , thin film , composite material , nanotechnology , layer (electronics) , optics , chemistry , electrical engineering , engineering , physics , quantum mechanics
We examine SnO 2 as a next generation material for transparent electrode using electron beam (EB) plasma deposition method at room temperature. We have found that a SiO 2 layer is a very effective barrier in reducing the increase in resistance caused by annealing. Making use of this barrier, we were successful in obtaining SnO 2 resistivities as low as 6.60 × 10 −5 Ω ⋅ m after annealing.