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64.3: Amorphous Silicon Thin‐Film Transistor Backplane on Stainless Steel Foil Substrates for AMOLEDs
Author(s) -
Hong Yongtaek,
Heiler Gregory,
Kerr Roger,
Kattamis Alex Z.,
Cheng IChun,
Wagner Sigurd
Publication year - 2006
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2433407
Subject(s) - amoled , thin film transistor , materials science , backplane , oled , optoelectronics , amorphous silicon , foil method , active matrix , transistor , threshold voltage , oxide thin film transistor , silicon , amorphous solid , voltage , layer (electronics) , electrical engineering , crystalline silicon , nanotechnology , composite material , engineering , crystallography , chemistry
We developed a hydrogenated amorphous silicon (a‐Si:H) thin‐film transistor (TFT) process on stainless steel (SS) foil substrates for high uniformity of TFT characteristics. The a‐Si:H TFTs with channel length of 5μm showed a mobility of ∼0.3cm 2 /Vs and a threshold voltage of ∼4.5 V, which are similar to those of TFTs on glass substrates. We designed a pixel circuit with two a‐Si:H TFTs and fabricated a 70ppi active‐matrix organic light‐emitting display (AMOLED) backplane on 75μm thick SS foil substrates. The pixel circuit can provide OLED current of up to 9.2μA at V DD =20V, V scan =20V, and V data =15V. This current level can produce a luminance of greater than 500cd/m 2 by an AMOLED using a white OLED with a luminous efficiency greater than“12cd/A and RGBW color filters.