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58.4: An Effective Inverted OLED Structure for 2.2 Inch Full Color AMOLED Display on a‐Si TFT Backplane
Author(s) -
Wu J. H.,
Wu C. C.,
Lo S. K.,
Lu C. C.,
Lee P. T.,
Kao Y. L.,
Shen W. J.,
Tzen J. C.,
Huang P. L.,
Huang J. Y.,
Tang S. J.
Publication year - 2006
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2433380
Subject(s) - backplane , amoled , oled , thin film transistor , materials science , full color , optoelectronics , computer graphics (images) , computer science , layer (electronics) , computer hardware , active matrix , nanotechnology
We fabricated bottom‐emitting AMOLED displays with a simplest 2T‐1C pixel design and inverted OLED, in which a common high voltage applied on R, G and B pixels at different low voltages for emitting at different threshold voltage. Emitting efficiency of R and B were ideally adjusted for gray level control with the same gamma curve. Mg, Ca and LiF/Al layers were studied for electron injection from bottom ITO cathode. WO 3 , hole injection layer, covered by an Al anode was explored. Preliminary results for transparent display in the replacement of Al layer by ITO will be shown.