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57.1: Invited Paper : A Status on the Emission Uniformity of CNT FED Technology
Author(s) -
Dijon Jean,
Fournier Adeline,
Monsabert Thomas Goislard,
Levis Michel,
Meyer Robert,
Bridoux Claudine,
Montmayeul Brigitte,
Sarrasin Denis
Publication year - 2006
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2433372
Subject(s) - cathode , anode , luminance , pixel , standard deviation , materials science , current density , current (fluid) , optoelectronics , electrical engineering , optics , engineering , physics , mathematics , statistics , electrode , quantum mechanics
In this paper we discuss the non uniformity of CNT FED technology. Based on recent results obtained on four different cathode structures it is shown that the achieved current density is a first order parameter to control the display uniformity. An expression which provides the standard deviation of the non uniformity versus the emitted current is derived. Two percent standard deviation of the pixel to pixel luminance is demonstrated on 1cm 2 test display. A detailed analysis of the remaining 2% non uniformity is given and considered partly coming from the anode and partly associated with CNT shorting the gate and the cathode.