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41.3: In‐Line Deposition of High‐Efficiency p‐i‐n Organic Light‐Emitting Devices
Author(s) -
Toerker M.,
Eritt M.,
May Ch.,
Amelung J.,
Luber C.,
Hermann R.,
Zschippang Ch.,
Tomita Y.,
Leo K.
Publication year - 2006
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2433266
Subject(s) - oled , dopant , doping , materials science , optoelectronics , deposition (geology) , line (geometry) , voltage , electrical engineering , nanotechnology , engineering , layer (electronics) , paleontology , geometry , mathematics , sediment , biology
OLED devices with electrically doped transport layers show low operating voltage, high efficiency and long lifetime. For the first time, this paper demonstrates that the concept of p‐ and n‐type electrical doping can be applied under manufacturing conditions. It shows that handling of dopants, adjustment of doping concentrations, and preparation of p‐i‐n type OLED stacks is possible with the worldwide first vertical in‐line set‐up. An in‐line‐manufactured highly efficient RGB‐OLED‐system is presented.