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34.2: 2.2 Inch qqVGA AMOLED Drived by Ultra Low Temperature Poly Silicon (ULTPS) TFT Direct Fabricated below 200°C
Author(s) -
Kwon Jang Yeon,
Jung Ji Sim,
Park Kyung Bae,
Kim Jong Man,
Lim Hyuck,
Lee Sang Yoon,
Kim Jong Min,
Noguchi Takashi,
Hur Ji Ho,
Jang Jin
Publication year - 2006
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2433233
Subject(s) - materials science , amoled , thin film transistor , optoelectronics , passivation , oled , substrate (aquarium) , layer (electronics) , nanotechnology , active matrix , oceanography , geology
We demonstrated 2.2inch qqVGA AMOLED display drived by ultra low temperature poly‐Si (ULTPS) TFT not transferred but direct fabricated below 200°C. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma — CVD. In order to reduce stress of plastic, organic film was coated as inter‐dielectric and passivation layers. Finally, ULTPS TFT of which mobility is over 20 cm 2 /Vsec was fabricated on transparent plastic substrate and drived OLED display successfully.
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