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28.1: AMOLED using CW laser Crystallized Polycrystalline Silicon Thin‐Film Transistor
Author(s) -
Son YongDuck,
Yang KyungDong,
Son NamKil,
Hong SeongMan,
Park KyuChang,
Choo DongJoon,
Jang Jin,
Nam WooJin,
Lee JaeHoon,
Han MinKoo,
Oh MyungHwan
Publication year - 2006
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2433210
Subject(s) - amoled , materials science , thin film transistor , backplane , optoelectronics , laser , silicon , active layer , threshold voltage , transistor , layer (electronics) , voltage , optics , nanotechnology , electrical engineering , active matrix , physics , engineering
We have developed a 2.2‐inch QQVGA AMOLED display using CW laser crystallized (CLC) poly‐Si backplane. By using CW laser, the a‐Si on glass could be crystallized into one dimensional single crystalline silicon as a result of sequential lateral crystallization (SLC) region. The SLC region was used as an active layer of AMOLED backplane. The p‐channel poly‐Si TFT on SLC region exhibited the field‐effect mobility of 173 cm 2 /Vs, gate voltage swing of 0.5 V/dec. and threshold voltage of − 4.1 V. The brightness uniformity of AMOLEDs with and without compensation circuits have been compared.