Premium
22.3: A Novel Barrierless Cu Gate for TFT‐LCD
Author(s) -
Tsai WenChing,
Lai JerYeong,
Tu KouYuan,
Lin HanTu,
Gan FengYuan
Publication year - 2006
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2433188
Subject(s) - materials science , thin film transistor , substrate (aquarium) , alloy , optoelectronics , reliability (semiconductor) , liquid crystal display , metal gate , transistor , metallurgy , electrical engineering , composite material , gate oxide , layer (electronics) , engineering , physics , quantum mechanics , geology , voltage , power (physics) , oceanography
A barrierless Cu gate was proposed to fabricate the TFT‐LCD. The wholly Cu‐based gate is achieved by applying a Cu‐alloy film to improve the poor adhesion of Cu to the glass substrate. The taper angle of Cu/Cu‐alloy gate can be easily controlled by using the new Cu etchant. We have developed 1.8” panels with the barrierless Cu gate. Without capping any additional Cu barrier, the TFT characteristics and the reliability of the Cu gate TFT were the same as the one with the conventional metal gate such as Al and its alloys.