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10.3: 4.0 Inch Organic Thin Film Transistor (OTFT) Based Active Matrix Organic Light Emitting Diode (AMOLED) Display
Author(s) -
Suh Min Chul,
Jeong Jong Han,
Ahn Taek,
Park JinSeong,
Kim Su Young,
Kim Young Jae,
Kim Tae Jin,
Lee Hun Jung,
Lee Sang Min,
Park Yong Woo,
Mo YeonGon,
Chung HoKyoon,
Koo Bon Won,
Kim SangYeol,
Lee Sang Yoon
Publication year - 2006
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2433185
Subject(s) - amoled , thin film transistor , oled , active matrix , materials science , pentacene , optoelectronics , active layer , backplane , transistor , layer (electronics) , nanotechnology , computer science , electrical engineering , computer hardware , engineering , voltage
We have developed a 4.0 inch pentacene organic thin‐film transistors (OTFTs) based active matrix organic light‐emitting diode (AMOLED) display. To achieve bright and uniform displays, we have investigated several process issues unique to OTFT‐based OLEDs. A bottom contact structure was used to fabricate the pentacene TFT backplane. Fine metal masking (FMM), laser ablation technique (LAT), and polyvinyl alcohol based patterning method were used to isolate the pentacene active layer. The low processing temperature (maximum 150°C) may allow the use of polymeric substrates and lower cost processing. Uniform TFT performance is achieved with reasonably good mobility and on/off ratio. The initial OLED display performance is also presented.