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10.2: Low‐Voltage Pentacene OTFTs with High‐K Gate Dielectric and its Application to AMOLED
Author(s) -
Choi YongWoo,
Yoon SangSoo,
Choi JiHun,
Kim Hee Jung,
Son Jung Hun,
Kim SunYoung,
Lee Young Hee,
Choi Young Hwan,
Kim Seong Tae,
Kim IlDoo,
Lim MiWha
Publication year - 2006
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2433174
Subject(s) - pentacene , materials science , amoled , oled , optoelectronics , thin film transistor , dielectric , high κ dielectric , insulator (electricity) , gate dielectric , threshold voltage , voltage , electrical engineering , transistor , nanotechnology , layer (electronics) , active matrix , engineering
Abstract We recently developed room‐temperature deposited pyrochlore‐structure Bi 1.5 Zn 1.0 Nb 1.5 O 7 (BZN) insulator having the high dielectric constant (∍=50) and low leakage current. Using the high‐K BZN film as a gate insulator, we fabricated pentacene OTFTs operating at low voltage. We fabricated 12 × 12 OTFT‐driven OLED. We are integrating the OLED array with the low‐voltage high‐K pentacene OTFT.