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Crystallization of amorphous‐Si films by pulsed YAG2ω green laser for polycrystalline Si TFT fabrication
Author(s) -
Yura Shinsuke,
Sono Atsuhiro,
Okamoto Tatsuki,
Sato Yukio,
Kojima Tetsuo,
Nishimae Junichi,
Inoue Mitsuo,
Motonami Kaoru
Publication year - 2005
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.2121049
Subject(s) - citation , computer science , art history , philosophy , art , library science
— A pulsed YAG2ω green laser with a line‐shaped beam was applied in the crystallization process to fabricate polycrystalline‐Si TFTs, and this procedure was compared with excimer‐laser annealing (ELA). YAG2ω lasers are superior to excimer lasers in that they have fewer items to maintain and a longer working time ratio. The crystallization mechanism for YAG2ω laser annealing (YLA) based on the lateral growth of grain is different from that of ELA. Its fluence margin was obtained from the n‐channel mobility measured from fabricated TFTs and was found to be twice as large as that for ELA. We also found that overlapping irradiation does not change the mobility of TFTs. This is because the distribution of grain size is almost the same as in non‐overlapping regions. This suggests the possibility of overlapping irradiation in YLA.