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Effects of trace nickel on the growth kinetics and the electrical characteristics of metal‐induced laterally crystallized polycrystalline silicon and devices
Author(s) -
Zhang Dongli,
Wong Man
Publication year - 2005
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.2121048
Subject(s) - trace (psycholinguistics) , citation , polycrystalline silicon , silicon , nickel , computer science , library science , philosophy , physics , nanotechnology , materials science , metallurgy , linguistics , optoelectronics , layer (electronics) , thin film transistor
— An increase in the rate of nickel‐based metal‐induced lateral crystallization (MILC) of amorphous‐silicon (a‐Si) was observed when the length of an a‐Si island was decreased or, for a given island length, when an extra crystallization‐inducing window was added. With phosphorus implanted in a localized region offset from the MILC front on the a‐Si side, a slight reduction in the MILC rate was also observed. Nickel incorporated in a‐Si beyond the MILC front is believed to be responsible for these effects. A diffusion coefficient of ∼4 × 10 −8 cm 2 /sec was estimated for nickel in a‐Si at 600°C. An extended low‐temperature anneal performed subsequent to the formation of MILC polycrystalline silicon led to a higher effective mobility and a lower off‐state leakage current. If the anneal was performed in the presence of a phosphorus‐implanted region, the leakage current could be further reduced but the activation of subsequently implanted phosphorus was hindered. The same was not observed for the activation of subsequently implanted boron.