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P‐143: A Novel Current‐Scaling a‐Si:H TFTs Pixel Electrode Circuit for Active‐Matrix Organic Light‐Emitting Displays
Author(s) -
Lin YenChung,
Shieh HanPing D.,
Su ChiaChen,
Lee Hojin,
Kanicki Jerzy
Publication year - 2005
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2036579
Subject(s) - oled , thin film transistor , active matrix , optoelectronics , materials science , amoled , capacitor , electrode , threshold voltage , amorphous silicon , pixel , transistor , current mirror , voltage , electrical engineering , silicon , optics , nanotechnology , crystalline silicon , physics , engineering , layer (electronics) , quantum mechanics
Hydrogenated amorphous silicon thin‐film transistor (a‐Si:H TFT) pixel electrode circuit with a function of current scaling is proposed for active‐matrix organic light‐emitting displays (AM‐OLEDs). In contrast to the conventional current mirror pixel electrode circuit, in this circuit a high data‐to‐organic light‐emitting device (OLED) current ratio can be achieved, without increasing the a‐Si:H TFT size, by using a cascade structure of storage capacitors. Moreover, the proposed circuit can compensate for the variations of TFT threshold voltage. Simulation results, based on a‐Si:H TFT and OLED experimental data, showed that a data‐to‐OLED current ratio larger than 10 and a fast pixel programming time can be accomplished with the proposed circuit.
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