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P‐128: Inverted Top‐Emitting Organic Light‐Emitting Devices Using Vanadium Pentoxide as Anode Buffer Layer
Author(s) -
Zhu Xiuling,
Sun Jiaxin,
Peng Huajun,
Wong Man,
Kwok HoiSing
Publication year - 2005
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2036564
Subject(s) - anode , materials science , vanadium , pentoxide , work function , layer (electronics) , optoelectronics , buffer (optical fiber) , oled , doping , voltage , tantalum pentoxide , electrode , composite material , chemistry , electrical engineering , metallurgy , engineering , dielectric
Inverted top‐emitting organic light‐emitting devices (ITOLEDs) employing thin film of vanadium pentoxide (V 2 O 5 ) capped with vacuum deposited semitransparent silver layer as top anode were studied. The devices consisted of C‐545T doped in Alq 3 as emitting layers exhibited a maximum external current efficiency of ∼11cd/A and a turn on voltage of ∼6.4V. We attribute the good performance of the devices to the high work function of V 2 O 5 which provides efficient hole injection into the devices.