P‐128: Inverted Top‐Emitting Organic Light‐Emitting Devices Using Vanadium Pentoxide as Anode Buffer Layer | Zendy

Zhu Xiuling | Zendy; Sun Jiaxin | Zendy; Peng Huajun | Zendy; Wong Man | Zendy; Kwok HoiSing | Zendy

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P‐128: Inverted Top‐Emitting Organic Light‐Emitting Devices Using Vanadium Pentoxide as Anode Buffer Layer

Author(s) -

Zhu Xiuling,

Sun Jiaxin,

Peng Huajun,

Wong Man,

Kwok HoiSing

Publication year - 2005

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.2036564

Subject(s) - anode , materials science , vanadium , pentoxide , work function , layer (electronics) , optoelectronics , buffer (optical fiber) , oled , doping , voltage , tantalum pentoxide , electrode , composite material , chemistry , electrical engineering , metallurgy , engineering , dielectric

Inverted top‐emitting organic light‐emitting devices (ITOLEDs) employing thin film of vanadium pentoxide (V 2 O 5 ) capped with vacuum deposited semitransparent silver layer as top anode were studied. The devices consisted of C‐545T doped in Alq 3 as emitting layers exhibited a maximum external current efficiency of ∼11cd/A and a turn on voltage of ∼6.4V. We attribute the good performance of the devices to the high work function of V 2 O 5 which provides efficient hole injection into the devices.

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