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P‐59: Thin‐beam Crystallization Method for Fabrication of LTPS
Author(s) -
Knowles David S.,
Park JiYong,
Im Chaiin,
Das Palash,
Hoffman Thomas,
Burfeindt Bernd,
Muenz Holger,
Herkommer Alois,
Wilt Paul C.,
Limanov Alex B.,
Im James S.
Publication year - 2005
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2036484
Subject(s) - materials science , thin film transistor , silicon , fabrication , optoelectronics , polycrystalline silicon , amorphous silicon , amorphous solid , crystallization , cathode ray , laser , annealing (glass) , thin film , transistor , substrate (aquarium) , process (computing) , optics , nanotechnology , computer science , electron , electrical engineering , composite material , crystalline silicon , crystallography , engineering , alternative medicine , chemistry , oceanography , pathology , layer (electronics) , quantum mechanics , medicine , physics , chemical engineering , geology , voltage , operating system
Thin film transistors fabricated using Low Temperature Polycrystalline Silicon (LTPS) have several well‐known advantages over those made with amorphous Silicon: higher electron mobility, smaller size, higher speed. However, LTPS has not been widely adopted due to the relatively high cost and low yield of the process relative to a‐Si. We have investigated a laser annealing process that offers an improvement for both throughput and yield when compared to existing processes. The process uses a very narrow laser beam (∼5 microns) at high repetition rates to create large poly‐Si crystals via lateral growth. The beam length is long enough to allow the substrate to be scanned in a single pass, resulting in better uniformity without any seams seen in multi‐pass techniques. In this presentation, we will present results from a prototype system used to validate the critical elements of the process.