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P‐22: High Performance Fully Self‐Aligned Symmetric LDD TFT for System‐on‐Panel Display
Author(s) -
Liu ChunYen,
Hsu KuoBin,
Lee Ryan,
Tseng ChangHo,
Chang ShinChang,
Tsai YawMing
Publication year - 2005
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2036432
Subject(s) - thin film transistor , materials science , optoelectronics , flat panel display , transistor , low voltage , subthreshold conduction , plasma display , threshold voltage , subthreshold swing , voltage , electrical engineering , electrode , nanotechnology , layer (electronics) , engineering , physics , quantum mechanics
A f ully self‐ a ligned s ymme t ric (FASt) LDD poly‐Si transistor with short channel length was investigated for system‐on‐panel (SOP) display. FASt device has better performance than conventional LDD device, such as low threshold voltage of 0.61 V, high mobility of 125 cm 2 /V‐s, low subthreshold swing of 140 mV/dec, high hot carrier stress endurance, and good device uniformity through whole glass substrate (620 mm × 750 mm). The excellent TFT electric characteristics permit the low driving voltage and narrow device dimension for the application of SOP display.