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P‐15: Highly Reliable Amorphous Si TFT with Low Leakage for AMLCD and AMOLED Applications
Author(s) -
Chen ChiWen,
Tseng TesungYuen,
Chang TingChang,
Wang KaoCheng,
Huang ChenShuo,
Ling ChiaChun,
Liu PoTsun,
Lu HauYan
Publication year - 2005
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2036424
Subject(s) - materials science , optoelectronics , thin film transistor , amoled , amorphous silicon , leakage (economics) , silicon , amorphous solid , enhanced data rates for gsm evolution , nanotechnology , layer (electronics) , active matrix , computer science , crystalline silicon , crystallography , chemistry , telecommunications , macroeconomics , economics
A novel technology for manufacturing high‐performance hydrogenated amorphous silicon (a‐Si:H) TFT is developed in this work. In the bottom gate light‐shied a‐Si:H TFT structure, the side edge of a‐Si:H island is capped with extra deposition of heavily phosphorous‐doped a‐Si layer. Such an ingenuity can effectively eliminate the leakage path between the parasitic contacts between source/drain metal and a‐Si:H at the edge of a‐Si:H island. In addition, electrical performance of the novel a‐Si:H TFT device exhibits superior effective carrier mobility, as high as 1.05 cm 2 /Vsec due to the enormous improvement in parasitic resistance. The impressively high performance provides the potential of our proposed a‐Si:H TFT to apply for AMLCD and AMOLED technology.