P‐10: Mechanism of Lowering Contact Resistance between Transparent Conducting Oxide Layer and Mo/Al/Mo Layer in TFT‐LCDs | Zendy

Jeong ChangOh | Zendy; Bae YangHo | Zendy; Cho BeomSeok | Zendy; Lee JeHun | Zendy; Oh MinSeok | Zendy; Choi SungLak | Zendy; Hwang SeongYong | Zendy; Roh KyungLae | Zendy; Kim ShiYul | Zendy; Lim SoonKwon | Zendy; Seok JunHyung | Zendy

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P‐10: Mechanism of Lowering Contact Resistance between Transparent Conducting Oxide Layer and Mo/Al/Mo Layer in TFT‐LCDs

Author(s) -

Jeong ChangOh,

Bae YangHo,

Cho BeomSeok,

Lee JeHun,

Oh MinSeok,

Choi SungLak,

Hwang SeongYong,

Roh KyungLae,

Kim ShiYul,

Lim SoonKwon,

Seok JunHyung

Publication year - 2005

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.2036419

Subject(s) - layer (electronics) , materials science , contact resistance , oxide , mechanism (biology) , composite material , metallurgy , physics , quantum mechanics

It was found that the mechanism of lowering contact resistance between TCO and Mo/Al/Mo layer is the side ring contact between TCO and top Mo of Mo/Al/Mo. This is contrary to the previous results that used Mo x Al y interfacial layer to explain the low contact resistance of TCO and Mo/Al/Mo layer.

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