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P‐10: Mechanism of Lowering Contact Resistance between Transparent Conducting Oxide Layer and Mo/Al/Mo Layer in TFT‐LCDs
Author(s) -
Jeong ChangOh,
Bae YangHo,
Cho BeomSeok,
Lee JeHun,
Oh MinSeok,
Choi SungLak,
Hwang SeongYong,
Roh KyungLae,
Kim ShiYul,
Lim SoonKwon,
Seok JunHyung
Publication year - 2005
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2036419
Subject(s) - layer (electronics) , materials science , contact resistance , oxide , mechanism (biology) , composite material , metallurgy , physics , quantum mechanics
It was found that the mechanism of lowering contact resistance between TCO and Mo/Al/Mo layer is the side ring contact between TCO and top Mo of Mo/Al/Mo. This is contrary to the previous results that used Mo x Al y interfacial layer to explain the low contact resistance of TCO and Mo/Al/Mo layer.