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P‐2: A New a‐Si:H TFT Pixel Circuit Suppressing OLED Current Error Caused by the Hysteresis and Threshold Voltage Shift for Active Matrix Organic Light Emitting Diode
Author(s) -
Lee JaeHoon,
You BongHyun,
Han ChangWook,
Shin KwangSub,
Han MinKoo
Publication year - 2005
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2036410
Subject(s) - thin film transistor , oled , amoled , active matrix , materials science , threshold voltage , optoelectronics , diode , capacitor , pixel , spice , voltage , electrical engineering , transistor , physics , optics , engineering , nanotechnology , layer (electronics)
A new a‐Si:H TFT pixel circuit for active matrix organic light emitting diode (AMOLED) is proposed and verified by device measurements and SPICE simulations. The experimental and simulation results show that the proposed pixel, which consists of 6‐TFT and 1‐capacitor and 2‐additional horizontal signal lines, reduces a threshold voltage shift rate of a‐Si:H TFT by reverse bias annealing, as well as compensates both a threshold voltage shift and hysteresis phenomenon of a‐Si:H TFT by V T memory scheme.