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62.5L: Late‐News Paper: Two‐Dimensional Dynamic Modeling of Splay to Bend Transition in Pi Cell or BTN Device at High Voltage
Author(s) -
Zhang Yanli,
Wang Bin,
Chung David B.,
Colegrove Jennifer,
Bos Philip J.
Publication year - 2005
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2036363
Subject(s) - nucleation , distortion (music) , materials science , layer (electronics) , voltage , order (exchange) , electric field , transition layer , condensed matter physics , process (computing) , crystallography , nanotechnology , physics , computer science , chemistry , engineering , thermodynamics , electrical engineering , optoelectronics , amplifier , cmos , finance , quantum mechanics , economics , operating system
A bulk transition from the splay to bend state resulting from the application of a high voltage to a layer of liquid crystalline material has been previously observed experimentally, and has been explained as a reconstruction of the order in a two dimensional sheet near the center of the layer. In this paper, we propose an alternative explanation of the transition that includes defect nucleation and movement resulting from a very small periodic distortion of the director field in the plane of the considered layer. The dynamics of this alternative transition are shown through two‐dimensional dynamic modeling of the director field. Our simulation results show that this transition process occurs preferentially over the bulk order reconstruction predicted by one‐dimensional modeling.