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54.4: 4.1 inch Top‐Emission AMOLED on Flexible Metal Foil
Author(s) -
Shin Hyun Soo,
Koo Jae Bon,
Jeong Jae Kyeong,
Mo Yeon Gon,
Chung Ho Kyun,
Cheon Jun Hyuk,
Choi Jong Hyun,
Kim Kyu Man,
Hur Ji Ho,
Park Seung Hyun,
Kim Sang Kyu,
Jang Jin
Publication year - 2005
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2036329
Subject(s) - amoled , materials science , foil method , pmos logic , optoelectronics , voltage , threshold voltage , field electron emission , thin film transistor , electrical engineering , composite material , transistor , active matrix , engineering , layer (electronics) , physics , quantum mechanics , electron
Abstract We have developed a 4.1 inch AMOLED display with top emission structure on stainless steel foil. The p‐channel TFTs on metal foil exhibited the field‐effect mobility of 75.1 cm 2 /Vs, threshold voltage of −3.9V, and subthreshold swing of 0.9V/dec. Active‐matrix back planes were fabricated with the poly‐Si TFT with a conventional pixel circuit consisting of 2 TFTs and 1 cap. The scan driver circuits with PMOS were integrated on the metal foil.