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52.3: High ‐ Power InGaN Blue ‐ Laser Diodes for Displays
Author(s) -
Kozaki Tokuya,
Yanamoto Tomoya,
Miyoshi Takashi,
Fujimura Yasushi,
Nagahama ShinIchi,
Mukai Takashi
Publication year - 2005
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2036319
Subject(s) - diode , materials science , optoelectronics , laser , power (physics) , blue laser , wavelength , voltage , current (fluid) , optics , electrical engineering , physics , engineering , quantum mechanics
We have developed high power blue laser diodes (LDs) with an emission wavelength of 445 nm by using GaN material. The operating current and voltage of these LDs at an output power of 200mW were 274 mA and 4.9 V, respectively. The estimated lifetime was over 10,000h under 25 °C continuous‐wave operation at an output power of 200 mW.