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44.3: High‐Aperture Ratio AMOLED Pixel Design Employing V DD Line Elimination for Reducing OLED Current Density
Author(s) -
Nam WooJin,
Kim ChangYeon,
Lee JaeHoon,
Park SangGeun,
Han MinKoo
Publication year - 2005
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2036282
Subject(s) - oled , cathode , amoled , materials science , pixel , aperture (computer memory) , optoelectronics , line (geometry) , capacitor , current density , voltage , electrical engineering , layer (electronics) , optics , thin film transistor , physics , nanotechnology , active matrix , engineering , geometry , mathematics , quantum mechanics , acoustics
A new high‐aperture ratio AMOLED pixel design scheme improving OLED life‐time is proposed. The V DD supply line in each pixel is eliminated and the scan line supplies V DD to a pixel, thus a high‐aperture ratio of emission area is considerably increased. The increased emission area achieves a lower current density through OLED, so that the OLED degradation would be suppressed and the life‐time of OLED may be improved without varying the OLED materials. We also designed a storage capacitor employing the bank layer dielectric between ITO and cathode rather than typically used V DD line.