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42.2: Invited Paper: Influence of Lanthanide Level Locations on the Performance of Phosphors
Author(s) -
Dorenbos P.
Publication year - 2005
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2036272
Subject(s) - phosphor , lanthanide , luminescence , conduction band , valence (chemistry) , materials science , divalent , chemistry , optoelectronics , ion , physics , nuclear physics , metallurgy , organic chemistry , electron
Divalent and trivalent lanthanides are used in luminescent and storage phosphors where they play the role of luminescence center but also the role of charge trapping center. The performance of these phosphors critically depends on the location of lanthanide energy levels relative to the conduction band and valence band of the host crystal. This paper reviews the methods to find the absolute location of energy levels and then demonstrates how they influence the behavior of the phosphors.