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33.3: Source‐Gated Transistors in Amorphous Silicon for Active Matrix Displays
Author(s) -
Balon F.,
Shan J. M.
Publication year - 2005
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2036234
Subject(s) - active matrix , amorphous silicon , materials science , thin film transistor , transistor , saturation (graph theory) , optoelectronics , silicon , amorphous solid , voltage , electrical engineering , nanotechnology , engineering , crystalline silicon , chemistry , crystallography , layer (electronics) , mathematics , combinatorics
Compared with a FET, the Source‐Gated Transistor (SGT) has a lower saturation voltage and can operate with smaller carrier concentrations and higher internal fields. OLED arrays with amorphous silicon SGT pixel drivers would dissipate less power and have better stability.