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33.2: Investigation of the Fin‐Like TFT Structure in LTPS Devices
Author(s) -
Yin Huaxiang,
Xianyu Wenxu,
Jung Jisim,
Cho Hans,
Kim Doyoung,
Park Kyungbae,
Kwon Jangyeon,
Noguchi T.
Publication year - 2005
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2036232
Subject(s) - thin film transistor , fin , planar , materials science , process window , optoelectronics , crystallization , process (computing) , nanotechnology , computer science , layer (electronics) , composite material , engineering , computer graphics (images) , lithography , chemical engineering , operating system
LTPS TFTs realized with 3D Fin‐like multiple‐channels exhibit better electrical characteristics than those of conventional planar TFTs, due to their novel structure and the higher film quality in their device channels obtained through an ELC (Exicmer Laser Crystallization) process. The processes developed to form high T Si /W Si ratio Si fins serve to provide a larger ELC process window without involving additional patterning steps.