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33.1: A 3.2‐in. LCD Panel using Amorphous Silicon TFT Formed with Novel Selective and Dispersive Transfer Technique
Author(s) -
Onozuka Yutaka,
Hara Yujiro,
Hioki Tsuyoshi,
Tanaka Masao,
Miura Kentaro,
Sugi Keiji,
Akiyama Masahiko,
Uchikoga Shuichi
Publication year - 2005
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2036231
Subject(s) - thin film transistor , materials science , substrate (aquarium) , amorphous silicon , liquid crystal display , fabrication , silicon , optoelectronics , amorphous solid , oxide thin film transistor , transfer (computing) , nanotechnology , computer science , crystalline silicon , chemistry , crystallography , medicine , oceanography , alternative medicine , layer (electronics) , pathology , parallel computing , geology
A novel formation process for TFT using our proposed novel selective transfer technique, which enables low cost TFT fabrication on a large and flexible substrate, is proposed. This technique is used to fabricate a 3.2‐inch LCD Panel using amorphous silicon TFT transferred on glass substrate for the first time.