33.1: A 3.2‐in. LCD Panel using Amorphous Silicon TFT Formed with Novel Selective and Dispersive Transfer Technique | Zendy

Onozuka Yutaka | Zendy; Hara Yujiro | Zendy; Hioki Tsuyoshi | Zendy; Tanaka Masao | Zendy; Miura Kentaro | Zendy; Sugi Keiji | Zendy; Akiyama Masahiko | Zendy; Uchikoga Shuichi | Zendy

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33.1: A 3.2‐in. LCD Panel using Amorphous Silicon TFT Formed with Novel Selective and Dispersive Transfer Technique

Author(s) -

Onozuka Yutaka,

Hara Yujiro,

Hioki Tsuyoshi,

Tanaka Masao,

Miura Kentaro,

Sugi Keiji,

Akiyama Masahiko,

Uchikoga Shuichi

Publication year - 2005

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.2036231

Subject(s) - thin film transistor , materials science , substrate (aquarium) , amorphous silicon , liquid crystal display , fabrication , silicon , optoelectronics , amorphous solid , oxide thin film transistor , transfer (computing) , nanotechnology , computer science , crystalline silicon , chemistry , crystallography , medicine , oceanography , alternative medicine , layer (electronics) , pathology , parallel computing , geology

A novel formation process for TFT using our proposed novel selective transfer technique, which enables low cost TFT fabrication on a large and flexible substrate, is proposed. This technique is used to fabricate a 3.2‐inch LCD Panel using amorphous silicon TFT transferred on glass substrate for the first time.

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