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27.2: Characterizations of Flash Memory on Glass Using LTPS TFT with an Ultra‐Low‐Roughness Poly‐Si/SiO 2 Interface
Author(s) -
Chen HungTse,
Tsai PoHao,
Chen YuCheng,
Chen ChiLin,
Lin JiaXing,
Chang Jason C.,
Chen C. W.,
Lu H. Y.,
Wu H. H.,
Liu P. T.,
Chang T. C.
Publication year - 2005
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2036205
Subject(s) - thin film transistor , materials science , flash memory , threshold voltage , optoelectronics , oxide , surface roughness , surface finish , stack (abstract data type) , voltage , transistor , flash (photography) , nitride , composite material , layer (electronics) , electrical engineering , optics , metallurgy , computer hardware , computer science , physics , programming language , engineering
In this paper, flash memories using low temperature poly‐Si thin‐ film transistors (LTPS‐TFTs) with oxide‐nitride‐oxide (ONO) stack structure on glass was studied and fabricated. The surface roughness R ms of poly‐Si implemented in this work is less than 20Å. For 10 ms program/erase (P/E) pulse time, the threshold voltage window of memory is 1.5V and it maintains a wide threshold voltage window after 10 4 P/E cycles.