27.2: Characterizations of Flash Memory on Glass Using LTPS TFT with an Ultra‐Low‐Roughness Poly‐Si/SiO 2  Interface | Zendy

Chen HungTse | Zendy; Tsai PoHao | Zendy; Chen YuCheng | Zendy; Chen ChiLin | Zendy; Lin JiaXing | Zendy; Chang Jason C. | Zendy; Chen C. W. | Zendy; Lu H. Y. | Zendy; Wu H. H. | Zendy; Liu P. T. | Zendy; Chang T. C. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

27.2: Characterizations of Flash Memory on Glass Using LTPS TFT with an Ultra‐Low‐Roughness Poly‐Si/SiO 2 Interface

Author(s) -

Chen HungTse,

Tsai PoHao,

Chen YuCheng,

Chen ChiLin,

Lin JiaXing,

Chang Jason C.,

Chen C. W.,

Lu H. Y.,

Wu H. H.,

Liu P. T.,

Chang T. C.

Publication year - 2005

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.2036205

Subject(s) - thin film transistor , materials science , flash memory , threshold voltage , optoelectronics , oxide , surface roughness , surface finish , stack (abstract data type) , voltage , transistor , flash (photography) , nitride , composite material , layer (electronics) , electrical engineering , optics , metallurgy , computer hardware , computer science , physics , programming language , engineering

In this paper, flash memories using low temperature poly‐Si thin‐ film transistors (LTPS‐TFTs) with oxide‐nitride‐oxide (ONO) stack structure on glass was studied and fabricated. The surface roughness R ms of poly‐Si implemented in this work is less than 20Å. For 10 ms program/erase (P/E) pulse time, the threshold voltage window of memory is 1.5V and it maintains a wide threshold voltage window after 10 4 P/E cycles.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research