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27.1: A Novel Structure of AMLCD Panel Using Poly‐Si CMOS TFT
Author(s) -
Yang J. Y.,
Kim S. H.,
Park Y. I.,
Yoo J. S.,
Lee D. Y.,
Oh J. Y.,
Hong S. J.,
Lee J. I.,
Oh K. M.,
Lee S. W.,
Kang H. C.,
Lim K. M.,
Kim C. D.,
Yang M. S.,
Chung I. J.
Publication year - 2005
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2036204
Subject(s) - thin film transistor , cmos , fabrication , materials science , optoelectronics , electronic engineering , channel (broadcasting) , electrical engineering , engineering , nanotechnology , layer (electronics) , medicine , alternative medicine , pathology
In the fabrication of CMOS AMLCD panel, there has been much effort to reduce the number of mask steps in order to achieve the simpler process as well as the low‐cost production. In this paper, two methods for mask reduction; storage mask and LDD mask as well as self‐aligned sub micron LDD n‐channel TFT are introduced with good uniformity concept.