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21.2: A Low‐Voltage P‐type Poly‐Si Integrated Driving Circuits for Active Matrix Display
Author(s) -
Nam WooJin,
Jung SangHoon,
Lee JaeHoon,
Lee HyeJin,
Han MinKoo
Publication year - 2005
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2036178
Subject(s) - electronic circuit , compensation (psychology) , logic level , voltage , low voltage , reliability (semiconductor) , active matrix , materials science , overdrive voltage , electrical engineering , electronic engineering , power (physics) , optoelectronics , computer science , threshold voltage , engineering , thin film transistor , transistor , nanotechnology , physics , psychology , layer (electronics) , quantum mechanics , psychoanalysis
A low power poly‐Si gate and data driver circuits employing p‐type low temperature poly‐Si (LTPS) TFTs are proposed and verified by simulation and measurement. We have designed a 5V driven p‐type level‐shifter and it achieves a wide range output of ∼8∼10V. A new p‐type latch employing complementary clock compensation is proposed and the latch stores the low voltage (5V) data bits (D and D') without an output voltage loss. A simple and new source‐follower type poly‐Si analog buffer with fast charging is also designed and measured. P‐type poly‐Si fully integrated circuits on glass substrates may provide cost benefits and improve panel reliability.