Premium
Layer‐by‐layer nitrogenation of microcrystalline silicon for TFT applications
Author(s) -
Bu I.,
Milne W. I.
Publication year - 2005
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.2012606
Subject(s) - citation , computer science , layer (electronics) , information retrieval , art history , library science , art , nanotechnology , materials science
— We have optimized the low‐temperature growth of microcrystalline silicon at 80°C. This material has been used to fabricate bottom‐gate μc‐Si:H TFTs by using a layer‐by‐layer nitrogenation process. By using this process, the amorphous incubation layer can be converted into silicon nitride and leads to an increase in a field‐effect mobility of the TFT.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom