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Layer‐by‐layer nitrogenation of microcrystalline silicon for TFT applications
Author(s) -
Bu I.,
Milne W. I.
Publication year - 2005
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.2012606
Subject(s) - citation , computer science , layer (electronics) , information retrieval , art history , library science , art , nanotechnology , materials science
— We have optimized the low‐temperature growth of microcrystalline silicon at 80°C. This material has been used to fabricate bottom‐gate μc‐Si:H TFTs by using a layer‐by‐layer nitrogenation process. By using this process, the amorphous incubation layer can be converted into silicon nitride and leads to an increase in a field‐effect mobility of the TFT.