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Growth kinetics and characterization of SrGa 2 S 4 films prepared by deposition from binary vapors
Author(s) -
Djazovski O. N.,
Mikami T.,
Ohmi K.,
Tanaka S.,
Kobayashi H.
Publication year - 1998
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1985220
Subject(s) - cerium , photoluminescence , materials science , substrate (aquarium) , stoichiometry , doping , analytical chemistry (journal) , electron beam physical vapor deposition , evaporation , kinetics , thin film , absorption (acoustics) , flux (metallurgy) , deposition (geology) , chemistry , optoelectronics , nanotechnology , thermodynamics , physics , composite material , paleontology , oceanography , chromatography , quantum mechanics , sediment , biology , metallurgy , geology
— Thin films of Ce‐activated SrGa 2 S 4 were prepared by combining electron‐beam evaporation of Ce‐doped SrS with direct evaporation of Ga 2 S 3 . With respect to the stoichiometry of SrGa 2 S 4 films, a Ga 2 S 3 /SrS flux ratio in the 60–100 range was found empirically to give the best results for a substrate temperature of 460°C. Photoluminescence and decay characteristics of SrGa 2 S 4 :Ce films were investigated as a function of Ce concentration. The results indicate that increase in Ce concentration from 0.2 to 6 mol% is accompanied by a marked increase in both the cerium absorption and decay rate, whereas the emission peaks remain unchanged with cerium doping. A possible reason for the observed effects is discussed.