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Electroluminescent SrS:Ce thin films grown by gas‐source molecular‐beam epytaxy
Author(s) -
Tong W.,
Yang T.,
Chaichimansour M.,
Park W.,
Wagner B. K.,
Summers C. J.,
Sun S.S.,
King C. N.
Publication year - 1998
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1985201
Subject(s) - electroluminescence , materials science , molecular beam epitaxy , annealing (glass) , thin film , doping , optoelectronics , crystal growth , evaporation , analytical chemistry (journal) , epitaxy , nanotechnology , crystallography , composite material , chemistry , layer (electronics) , physics , chromatography , thermodynamics
— SrS:Ce thin films have been grown by gas‐source molecular‐beam epitaxy (GSMBE) for the development of high‐luminance, high‐efficiency electroluminescent (EL) flat‐panel displays. The growth conditions have been systematically investigated as a function of growth temperature, S to Sr flux ratio, Ce concentration, and ZnS and Mn co‐evaporation. Single‐crystal SrS and high‐quality SrS:Ce layers were successfully grown on GaAs and glass substrates, respectively, without a post‐annealing process at temperatures as low as 600°C. It was found that the grain size was greatly increased by co‐doping with Ga 2 S 3 during the growth, providing a possible means to further decrease the growth temperature.