Electroluminescent SrS:Ce thin films grown by gas‐source molecular‐beam epytaxy | Zendy

Tong W. | Zendy; Yang T. | Zendy; Chaichimansour M. | Zendy; Park W. | Zendy; Wagner B. K. | Zendy; Summers C. J. | Zendy; Sun S.S. | Zendy; King C. N. | Zendy

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Electroluminescent SrS:Ce thin films grown by gas‐source molecular‐beam epytaxy

Author(s) -

Tong W.,

Yang T.,

Chaichimansour M.,

Park W.,

Wagner B. K.,

Summers C. J.,

Sun S.S.,

King C. N.

Publication year - 1998

Publication title -

journal of the society for information display

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.578

H-Index - 52

eISSN - 1938-3657

pISSN - 1071-0922

DOI - 10.1889/1.1985201

Subject(s) - electroluminescence , materials science , molecular beam epitaxy , annealing (glass) , thin film , doping , optoelectronics , crystal growth , evaporation , analytical chemistry (journal) , epitaxy , nanotechnology , crystallography , composite material , chemistry , layer (electronics) , physics , chromatography , thermodynamics

— SrS:Ce thin films have been grown by gas‐source molecular‐beam epitaxy (GSMBE) for the development of high‐luminance, high‐efficiency electroluminescent (EL) flat‐panel displays. The growth conditions have been systematically investigated as a function of growth temperature, S to Sr flux ratio, Ce concentration, and ZnS and Mn co‐evaporation. Single‐crystal SrS and high‐quality SrS:Ce layers were successfully grown on GaAs and glass substrates, respectively, without a post‐annealing process at temperatures as low as 600°C. It was found that the grain size was greatly increased by co‐doping with Ga 2 S 3 during the growth, providing a possible means to further decrease the growth temperature.

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