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Monolithic integration of red, blue, and green lasers for smart projection displays
Author(s) -
Jain F.,
Srinivasan S.,
Heller E.,
LaComb R.,
Gokhale M.,
Huang W.
Publication year - 1997
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1985158
Subject(s) - laser , optoelectronics , materials science , distributed bragg reflector , tunnel junction , reflector (photography) , optics , quantum tunnelling , physics , light source , wavelength
— Novel device structures integrating multiple‐output lasers emitting in red, green, and blue colors are proposed. Active layers emitting red (AlGaAs or InGaAlP), blue (Zn x Cd 1−x Se), and green (Zn y Cd 1−y Se) are shown to be integrated monolithically on GaAs substrates using conventional p‐n tunnel junctions and asymmetric resonant tunneling structures. Both edge‐ and surface‐emitting structures are described. Experimental characteristics of two red‐emitting Al 0.16 Ga 0.84 As‐Al 0.45 Ga 0.55 As‐GaAs lasers, integrated in tandem via a low‐voltage‐drop tunnel junction are presented, demonstrating the feasibility of monolithic integration. Blue‐green lasers are shown to operate at lower voltages using asymmetric resonant tunneling structures between p ‐GaAs/ p ‐ZnSe layers. Integration of surface‐emitting lasers including folded‐cavity and Distributed Bragg Reflector (DBR) structures is also presented along with simulation of electrical and optical characteristics. An integrated pixel‐addressing methodology is described for smart projection displays.