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Characterization of the electrical properties of SrS:Ce thin‐film electroluminescent devices
Author(s) -
Ohmi Koutoku,
Ishitani Katsuaki,
Kashio Yukinori,
Tanaka Shosaku,
Kobayashi Hiroshi
Publication year - 1997
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1985144
Subject(s) - electroluminescence , materials science , optoelectronics , space charge , irradiation , polarization (electrochemistry) , electric field , electron , nanotechnology , chemistry , physics , layer (electronics) , quantum mechanics , nuclear physics
— The electrical properties of SrS:Ce thin‐film electroluminescent (TFEL) devices were studied. Photo‐irradiation effects on capacitance‐voltage and charge‐voltage characteristics of SrS:Ce TFEL devices were measured and compared with those of ZnS: Mn devices. For the SrS:Ce device, the polarization charge due to the positive space charge was estimated to be 0.94 μC/cm 2 . This polarization charge was remarkably reduced by photo‐irradiation. For the ZnS: Mn TFEL device, the polarization charge due to the positive space charge was 0.66 μC/cm 2 . However, the reduction of the polarization charge by photo‐irradiation was small compared to that of the SrS:Ce device. The unique electrical and optical characteristics observed in the SrS:Ce TFEL devices such as relaxation of phosphor field and leading‐ and trailing‐edge emissions are considered as functions of the large amount of space charge and also due to the electron emission from electron traps and electron recapture by the traps.