Self‐limiting growth of ZnS on Si substrates at a growth rate of 0.7 monolayers per operating cycle by atomic layer epitaxy using MOCVD | Zendy

Liu C. H. | Zendy; Yokoyama M. | Zendy; Su Y. K. | Zendy; Lee N. C. | Zendy

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Self‐limiting growth of ZnS on Si substrates at a growth rate of 0.7 monolayers per operating cycle by atomic layer epitaxy using MOCVD

Author(s) -

Liu C. H.,

Yokoyama M.,

Su Y. K.,

Lee N. C.

Publication year - 1997

Publication title -

journal of the society for information display

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.578

H-Index - 52

eISSN - 1938-3657

pISSN - 1071-0922

DOI - 10.1889/1.1985136

Subject(s) - metalorganic vapour phase epitaxy , atomic layer epitaxy , monolayer , substrate (aquarium) , epitaxy , growth rate , materials science , chemical vapor deposition , layer (electronics) , analytical chemistry (journal) , volumetric flow rate , atmospheric temperature range , limiting , deposition (geology) , nanotechnology , chemistry , chromatography , mechanical engineering , mathematics , physics , quantum mechanics , sediment , geology , meteorology , engineering , biology , paleontology , oceanography , geometry

— ZnS films were grown on (100) Si substrates by atomic layer epitaxy (ALE) using a metal‐organic chemical vapor deposition system. We studied the growth rate as a function of the substrate temperature and the flow rates of DMZn and H 2 S. The growth rate was kept constant at 0.7 monolayers per cycle and was independent of substrate temperature in the range 125–225°C, and of the mole fractions of both DMZn and H 2 S. Although the “fractional ALE” growth does not produce a two‐dimensional surface, SEM micrographs show smooth ZnS films with the atomic ratio of S: Zn very close to unity.

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