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A completely self‐aligned TFT‐array process using five masks
Author(s) -
Kakkad Ramesh,
Jinnai Toshihide,
Miura Yasunori,
Honjo Masuji,
Shibusawa Makoto,
Ibaraki Nobuki,
Obara Takashi,
Matsunaka Shigeki,
Ito Hitoshi
Publication year - 1996
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1984997
Subject(s) - thin film transistor , materials science , optoelectronics , pixel , amorphous silicon , annealing (glass) , amorphous solid , process (computing) , silicon , optics , computer science , nanotechnology , crystalline silicon , computer vision , physics , composite material , organic chemistry , layer (electronics) , chemistry , operating system
— In this paper we present a five‐mask process to make completely self‐aligned inverted‐staggered amorphous‐silicon TFTs. The mask‐count reduction from a conventional seven‐mask process was accomplished by simultaneous patterning of pixel electrodes and signal lines and by the use of back‐side laser annealing. A mobility value close to 1 cm 2 /V‐s was obtained for TFTs fabricated using this process.
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